Rysbaev, A. S., Tashkent State Technical University, Uzbekistan

• Vol 4, No 1 (2020) - EURASIAN JOURNAL OF PHYSICS AND FUNCTIONAL MATERIALS 2020, 4(1), 6-12
  Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides
  Abstract  PDF (Eng)
• Vol 3, No 3 (2019) - 197-203
  Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
  Abstract  PDF (Eng)
• Vol 2, No 4 (2018) - Статьи
  Influence of structural defects in silicon on formation of photosensitive heterostructures Mn₄Si₇-Si-Mn₄Si₇ and Mn₄Si₇-Si-M
  Abstract  PDF (Eng)
• Vol 2, No 4 (2018) - Статьи
  Development of thermal sensors by implantation ions P⁺ and B⁺ in different sides of Si(111)
  Abstract  PDF (Eng)