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Eurasian Journal of Physics and Functional Materials

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For citations:

Bekpulatov I.R., Rysbaev A.S., Dzhuraev Sh.Kh., Kasymov A.S. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eurasian Journal of Physics and Functional Materials. 2018;2(4):367-376. https://doi.org/10.29317/ejpfm.2018020409

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This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 2522-9869 (Print)
ISSN 2616-8537 (Online)

Deputy Editor-In-Chief:
Asset Kabyshev
L.N. Gumilyov Eurasian National University, Astana, Kazakhstan.
e-mail: assetenu@gmail.com

supported by NEICON (Elpub lab)