Igamov, B. D., Tashkent State Technical University, Uzbekistan
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Vol 3, No 3 (2019) - 197-203
Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing
Abstract PDF (Eng)
ISSN 2522-9869 (Print)
ISSN 2616-8537 (Online)
ISSN 2616-8537 (Online)
